2SB1570 データシート - Inchange Semiconductor
メーカー

Inchange Semiconductor
DESCRIPTION
• High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min)
• Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -7A
• Complement to Type 2SD2401
• Minimum Lot-to-Lot variations for robust device performance and reliable operatio
APPLICATIONS
• Designed for audio,series regulator and general purpose applications.
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor