2SB1402 データシート - New Jersey Semiconductor
メーカー
New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEo= -120V(Min)
• High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V,lc= -1.5A)
APPLICATIONS
• Designed for low frequency power amplifier applications.
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
