2SB1236 データシート - Inchange Semiconductor
メーカー

Inchange Semiconductor
DESCRIPTION
• High breakdown voltage. (BVCEO = -120V)
• Low collector output capacitance.
• High transition frequency. (fT = 50MHz)
• Complement to Type 2SD1857
APPLICATIONS
• Designed for audio amplifier,
voltage regulator, and general purpose power amplifiers.
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Shenzhen SPTECH Microelectronics Co., Ltd.
Silicon PNP Power Transistor
Inchange Semiconductor
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New Jersey Semiconductor