2SB1189 データシート - Galaxy Semi-Conductor
メーカー
Galaxy Semi-Conductor
FEATURES
● High breakdown voltage,BVCEO=-80V,
And high current,IC=-0.7A.
● Complementary the 2SD1767.
Medium power transistor(80V, 0.7A)
ROHM Semiconductor
Medium power transistor (80V, 0.7A)
ROHM Semiconductor
Medium power transistor(80V,0.7A)
Galaxy Semi-Conductor
Medium power transistor(-80V, -0.7A)
ROHM Semiconductor
Middle Power Transistor (-80V / -0.7A)
ROHM Semiconductor
Middle Power Transistor (80V / 0.7A)
ROHM Semiconductor
PNP -0.7A -80V Middle Power Transistor
ROHM Semiconductor
PNP -0.7A -80V Middle Power Transistor
ROHM Semiconductor
NPN 0.7A 80V Middle Power Transistor
ROHM Semiconductor
PNP -0.7A -80V Middle Power Transistor
ROHM Semiconductor
