2SB1017 データシート - New Jersey Semiconductor
メーカー

New Jersey Semiconductor
DESCRIPTION
• Low Collector Saturation Voltage- : VCE(sat)= -1.7V(Max)@IC= -3A
• Good Linearity of hFE
• Complement to Type 2SD1408
APPLICATIONS
• Designed for power amplifier applications.
• Recommended for 20~25W high-fidelity audio frequency amplifier output stage.
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
New Jersey Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
New Jersey Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
New Jersey Semiconductor