2SB1016A(1997) データシート - Toshiba
メーカー
Toshiba
POWER AMPLIFIER APPLICATIONS
• High Breakdown Voltage: VCEO = −100 V
• Low Collector-Emitter Saturation Voltage: VCE (sat) = −2.0 V (Max.)
• Complementary to 2SD1407A
TOSHIBA Transistor Silicon PNP Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type ( Rev : 2004 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type ( Rev : 2006 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type ( Rev : 2009 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type ( Rev : 2004 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type ( Rev : 2013 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type
Toshiba
