Features
• Adoption of FBET, MBIT processes
• High breakdown voltage and large current capacity
• Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s
Bipolar Transistor (–)160V, (–)0.7A, Low VCE(sat), (PNP)NPN Single PCP
ON Semiconductor
Bipolar Transistor (–)160V, (–)1.5A, Low VCE(sat), (PNP)NPN Single NMP
ON Semiconductor
Bipolar Transistor (–)160V, (–)1.5A, Low VCE(sat), (PNP)NPN Single TO-126ML
ON Semiconductor
Bipolar Transistor (–)160V, (–)1.5A, Low VCE(sat) (PNP)NPN Single TP/TP-FA
ON Semiconductor
Bipolar Transistor (–)50V, (–)2A, Low VCE(sat), (PNP)NPN Single PCP
ON Semiconductor
Bipolar Transistor (-)50V, (-)7A, Low VCE(sat), (PNP)NPN Single PCP
ON Semiconductor
Bipolar Transistor (-)50V, (-)4A, Low VCE(sat), (PNP)NPN Single PCP
ON Semiconductor
Bipolar Transistor (–)100V, (–)1A, Low VCE(sat), (PNP)NPN Single PCP
ON Semiconductor
Bipolar Transistor –100V, –2A, Low VCE(sat) PNP Single PCP
ON Semiconductor
Bipolar Transistor –30V, –5A, Low VCE(sat) PNP Single PCP
ON Semiconductor