2SA1015(1996) データシート - Toshiba
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Toshiba
AUDIO FREQUENCY AMPLIFIER APPLICATIONS
LOW NOISE AMPLIFIER APPLICATIONS
• High Voltage and High Current
: VCEO= −50 V (Min.), IC= −150 mA (Max.)
• Excellent hFE Linearity
: hFE(2) = 80 (Typ.) at VCE= −6 V, IC= −150 mA
: hFE(IC= −0.1mA)/hFE(IC= −2 mA) = 0.95 (Typ.)
• Low Noise: NF = 0.2dB (Typ.) (f = 1kHz)
• Complementary to 2SC1815 (L)
Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Toshiba
Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
Toshiba
Silicon Transistor PNP Epitaxial Type (PCT process)
Toshiba
Silicon PNP Epitaxial Type (PCT Process) Transistor
Toshiba
Silicon PNP Epitaxial Type (PCT Process) Transistor
Toshiba
SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TRANSISTOR ( Rev : 1996 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Toshiba