2N7002KTB6 データシート - PANJIT INTERNATIONAL
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PANJIT INTERNATIONAL
FEATURES
• RDS(ON), VGS@10V,IDS@500mA=3Ω
• RDS(ON), VGS@4.5V,IDS@200mA=4Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected 2KV HBM
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: SOT-563 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Marking : 27
60V N-Channel Enhancement Mode MOSFET - ESD Protected
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected ( Rev : 2010 )
PANJIT INTERNATIONAL
60V ESD Protected N-Channel Enhancement Mode MOSFET
HY ELECTRONIC CORP.
60V N-Channel Enhancement Mode MOSFET - ESD Protected
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected ( Rev : 2009 )
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected ( Rev : 2012 )
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected ( Rev : 2010 )
PANJIT INTERNATIONAL