2N7002KDW(2010) データシート - PANJIT INTERNATIONAL
メーカー

PANJIT INTERNATIONAL
FEATURES
• RDS(ON), VGS@10V,IDS@500mA=3Ω
• RDS(ON), VGS@4.5V,IDS@200mA=4Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected 2KV HBM
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
60V N-Channel Enhancement Mode MOSFET - ESD Protected
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected ( Rev : 2010 )
PANJIT INTERNATIONAL
60V ESD Protected N-Channel Enhancement Mode MOSFET
HY ELECTRONIC CORP.
60V N-Channel Enhancement Mode MOSFET - ESD Protected
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected ( Rev : 2009 )
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected ( Rev : 2012 )
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected ( Rev : 2007 )
PANJIT INTERNATIONAL