General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

FEATUREs and benefits
„ Logic-level compatible
„ Very fast switching
„ Trench MOSFETtechnology
„ ESD protection up to 2 kV
„ AEC-Q101 qualified

APPLICATIONs
„ Relay driver
„ High-speed line driver
„ Low-side loadswitch
„ Switching circuits