General description
   N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

FEATUREs and benefits
■ Very fast switching
■ Trench MOSFET technology
■ ESD protection up to 2 kV
■ Logic-level compatible
■ Ultra thin package profile with 0.37
   mm height

APPLICATIONs
■ Relay driver
■ High-speed line driver
■ Low-side loadswitch
■ Switching circuits