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2N7000(2017) データシート - Diotec Semiconductor Germany
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Diotec Semiconductor Germany
N-Channel Enhancement Mode FET
FEATUREs
Fast switching times
Compliant to RoHS, REACH,
Conflict Minerals 1)
Typical Applications
Signal processing, Logic level converter, Drivers
Commercial grade 1)
Mechanical Data 1)
Taped in ammo pack
(Raster 2.54) 4000
Weight approx. 0.18 g
Case material UL 94V-0
Solder & assembly conditions 260°C/10s
MSL N/A
N-Channel Enhancement Mode FET
Diotec Semiconductor Germany
N-Channel Enhancement Mode FET ( Rev : 2017 )
Diotec Semiconductor Germany
N-Channel Enhancement Mode FET
Diotec Semiconductor Germany
N-Channel Enhancement Mode FET
Diotec Semiconductor Germany
N-Channel Enhancement Mode FET
Diotec Semiconductor Germany
N-Channel Enhancement Mode FET
Diotec Semiconductor Germany
N-Channel Enhancement Mode FET
Diotec Semiconductor Germany
N-Channel Enhancement Mode FET
Diotec Semiconductor Germany
N-Channel Enhancement Mode FET ( Rev : 2017 )
Diotec Semiconductor Germany
N-Channel Enhancement Mode MOS FET
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