Darlington Silicon Power Transistors

Designed for general-purpose amplifier and low speed switching applications.

• High DC Current Gain -
    hFE = 3500 (Typ) @ IC = 4.0 Adc
• Collector-Emitter Sustaining Voltage - @ 200 mAdc
    VCEO(sus) = 60 Vdc (Min) - 2N6667
                       = 80 Vdc (Min) - 2N6668
• Low Collector-Emitter Saturation Voltage -
    VCE(sat) = 2.0 Vdc (Max)@ IC = 5.0 Adc
• Monolithic Construction with Built-In Base-Emitter Shunt Resistors
• TO-220AB Compact Package
• Complementary to 2N6387, 2N6388
• Pb-Free Packages are Available*