2N6576(V2) データシート - Inchange Semiconductor
メーカー
Inchange Semiconductor
DESCRIPTION
• Built-in Base-Emitter Shunt Resistors
• High DC current gain-
: hFE = 2000 (Min) @ IC = 4A
• Collector-Emitter Sustaining Voltage-
: VCEO(SUS)=60V(Min)
APPLICATIONS
• Power switching
• Hammer drivers
• Series and shunt regulator
• Audio amplifiers
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Silicon NPN Darlingtion Power Transistor ( Rev : V2 )
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Silicon NPN Darlingtion Power Transistor
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