2N6517 データシート - Samsung
メーカー
Samsung
HIGH VOLTAGE TRANSISTOR
• Collector-Emitter Voltage: VCEO = 350V
• Collector Dissipation: Pc (max) = 625mW
NPN Epitaxial Planar Transistor
First Components International
NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
