2N6050 データシート - New Jersey Semiconductor
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New Jersey Semiconductor
DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS
...designed lor general-purpose power amplifier and low frequency switching applications
FEATURES:
* Monolithic Construction with Butt-in Base-Emitter Shunt Resistors.
* High DC Current Gain -
hFE = 3500(typ)@ Ic=5.0 A
Darlington Complementary Silicon Power Transistors ( Rev : 2016 )
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Darlington Complementary Silicon Power Transistors ( Rev : 2007 )
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