2N5661(V2) データシート - Inchange Semiconductor
メーカー

Inchange Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: VCEO=300V(Min)
• Minimum Lot-to-Lot variations for robust device
Performance and reliable operation
APPLICATIONS
• Power amplifier and switching applications
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor