2N5302(2001) データシート - ON Semiconductor
メーカー
ON Semiconductor
High-Power NPN Silicon Transistor
. . . for use in power amplifier and switching circuits applications.
• Low Collector–Emitter Saturation Voltage –
VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc
NPN SILICON HIGH POWER TRANSISTOR
Microsemi Corporation
NPN HIGH POWER SILICON TRANSISTOR
Microsemi Corporation
NPN HIGH POWER SILICON TRANSISTOR
Microsemi Corporation
NPN HIGH POWER SILICON TRANSISTOR
Microsemi Corporation
HIGH POWER NPN SILICON TRANSISTOR
STMicroelectronics
HIGH POWER NPN SILICON TRANSISTOR ( Rev : 1997 )
STMicroelectronics
HIGH POWER NPN SILICON TRANSISTOR
STMicroelectronics
HIGH POWER NPN SILICON TRANSISTOR
New Jersey Semiconductor
NPN HIGH POWER SILICON TRANSISTOR
Microsemi Corporation
HIGH POWER TRANSISTOR SILICON NPN
New Jersey Semiconductor
