2N4232A データシート - New Jersey Semiconductor
メーカー
New Jersey Semiconductor
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS
..designed for general-purpose power amplifier and switching applications.
FEATURES:
* Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A
* Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A
* LowLeakage Current- lcex =0.1 mA(Max)
MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS
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COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS
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COMPLEMENTARY SILICON MEDIUM POWER TRANSISTORS
Semelab - > TT Electronics plc
Medium-power complementary Silicon Transistors
Unspecified
