2N3771(2001) データシート - ON Semiconductor
メーカー
ON Semiconductor
. . . designed for linear amplifiers, series pass regulators, and inductive switching applications.
• Forward Biased Second Breakdown Current Capability
IS/b = 3.75 Adc @ VCE = 40 Vdc — 2N3771
= 2.5 Adc @ VCE = 60 Vdc — 2N3772
HIGH-POWER NPN SILICON POWER TRANSISTORS
Mospec Semiconductor
HIGH POWER NPN SILICON POWER TRANSISTORS
Boca Semiconductor
High Power NPN Silicon Power Transistors
ON Semiconductor
HIGH-POWER NPN SILICON POWER TRANSISTORS
Mospec Semiconductor
HIGH-POWER NPN SILICON POWER TRANSISTORS
Mospec Semiconductor
HIGH POWER NPN SILICON POWER TRANSISTORS
Mospec Semiconductor
HIGH-POWER NPN SILICON POWER TRANSISTORS
Mospec Semiconductor
HIGH POWER NPN SILICON POWER TRANSISTORS
Boca Semiconductor
HIGH-POWER NPN SILICON TRANSISTORS
Mospec Semiconductor
HIGH-POWER NPN SILICON TRANSISTORS
New Jersey Semiconductor
