2DB1182Q データシート - Diodes Incorporated.
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Diodes Incorporated.
Features
• BVCEO > -32V
• IC = -2A High Continuous Collector Current
• ICM = -3A Peak Pulse Current
• Epitaxial Planar Die Construction
• Low Collector-Emitter Saturation Voltage
• Ideal for Medium Power Switching or Amplification Applications
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
50V PNP MEDIUM POWER TRANSISTOR IN TO252
Diodes Incorporated.
32V PNP MEDIUM POWER TRANSISTOR IN SOT89
Diodes Incorporated.
32V PNP MEDIUM POWER TRANSISTOR IN SOT89 ( Rev : 2021 )
Diodes Incorporated.
Medium Power PNP Transistor (-32V, -0.5A)
ROHM Semiconductor
120V NPN MEDIUM POWER DARLINGTON TRANSISTOR IN TO252
Diodes Incorporated.
Medium Power Transistor (−32V, −1A)
ROHM Semiconductor
Medium Power Transistor (32V, 800mA) ( Rev : 2015 )
ROHM Semiconductor
Medium Power Transistor (32V, 0.8A)
First Silicon Co., Ltd
Medium Power Transistor (32V, 0.8A)
Leshan Radio Company,Ltd
Medium Power Transistor (-32V,-500mA) ( Rev : 2015 )
ROHM Semiconductor