GENERAL DESCRIPTION
The 2731-100M is an internally matched, COMMON BASE bipolar transistor capable of providing 100 Watts of pulsed RF output power at 250µs pulse width, 10% duty factor across the 2700 to 3100 MHz band. The transistor prematch and test fixture has been optimized through the use of 10 Ohm TRL Analysis. This ceramic sealed transistor is specifically designed for S-band radar applications. It utilizes gold metallization and emitter ballasting to provide high reliability and supreme ruggedness.
20Watts, 36 Volts, 100us, 10% Radar 2700-3100 MHz
Microsemi Corporation
125 Watts, 36 Volts, 100µs, 10% Radar 2700-2900 MHz
Advanced Power Technology
125 Watts, 36 Volts, 100µs, 10% Radar 2700-2900 MHz
Advanced Power Technology
170 Watts, 38 Volts, 100µs, 10% Radar 2700-2900 MHz
Microsemi Corporation
170 Watts, 38 Volts, 100µs, 10% Radar 2700-2900 MHz
Advanced Power Technology
150 Watts, 38 Volts, 50µs, 4% Radar 2900-3100 MHz
Advanced Power Technology
100 Watts - 50 Volts, Pulsed Radar 1400 - 1600 MHz
GHz Technology
300 Watts - 40 Volts, 150ms, 10% Radar 1200 - 1400 MHz
Advanced Power Technology
300 Watts - 50 Volts, 330µs, 10% Radar 1200 - 1400 MHz
Microsemi Corporation
300 Watts - 50 Volts, 100us, 10% Radar 1200 1400 MHz
Advanced Power Technology