1SS350 データシート - TY Semiconductor
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TY Semiconductor
Features
● Small interterminal capacitance (C=0.69pF typ).
● Low forward voltage (VF=0.23V max).
● High breakdown voltage (VR=55V).
● Very small-sized package permitting the 1SS350-applied sets to be made small and slim.
Sillicon Epitaxial Schottky Barrier Diode
SANYO -> Panasonic
Sillicon Epitaxial Schottky Barrier Diode
SANYO -> Panasonic
Sillicon Epitaxial Schottky Barrier Diode
KEXIN Industrial
Sillicon Epitaxial Schottky Barrier Diode
KEXIN Industrial
Sillicon Epitaxial Schottky Barrier Diode
SANYO -> Panasonic
Sillicon Epitaxial Schottky Barrier Diode ( Rev : 1998 )
SANYO -> Panasonic
Sillicon Epitaxial Schottky Barrier Diode
TY Semiconductor
Sillicon Epitaxial Schottky Barrier Diode
KEXIN Industrial
Sillicon Epitaxial Planar Switching Diode
Shanghai Leiditech Electronic Technology Co., Ltd
NPN epitaxial sillicon transistor ( Rev : Rev06 )
SHIKE Electronics