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1S2074 データシート - Hitachi -> Renesas Electronics
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Hitachi -> Renesas Electronics
Silicon Epitaxial Planar Diode for High Speed Switching
FEATUREs
• Low capacitance. (C = 3.0 pF max)
• Short reverse recovery time. (trr = 4.0 ns max)
• High reliability with glass seal.
Silicon Epitaxial Planar Diode for High Speed Switching
Renesas Electronics
Silicon Epitaxial Planar Diode for High Speed Switching
Hitachi -> Renesas Electronics
Silicon Epitaxial Planar Diode for High Speed Switching
Hitachi -> Renesas Electronics
Silicon Epitaxial Planar Diode for High Speed Switching
Hitachi -> Renesas Electronics
Silicon Epitaxial Planar Diode for High Speed Switching
Renesas Electronics
Silicon Epitaxial Planar Diode for High Speed Switching
Renesas Electronics
Silicon Epitaxial Planar Diode for High Speed Switching
Renesas Electronics
Silicon Epitaxial Planar Diode for High Speed Switching
Hitachi -> Renesas Electronics
Silicon Epitaxial Planar Diode for High Speed Switching
Renesas Electronics
Silicon Epitaxial Planar Diode for High Speed Switching
Hitachi -> Renesas Electronics
