部品番号
1N5817W
コンポーネント説明
Other PDF
no available.
PDF
page
4 Pages
File Size
122.6 kB
メーカー
Sangdest Microelectronic (Nanjing) Co., Ltd
1N5817W データシート - Sangdest Microelectronic (Nanjing) Co., Ltd
Sangdest Microelectronic (Nanjing) Co., Ltd
Features:
• Metal silicon junction, majority carrier conduction
• Guarding for overvoltage protection
• Low power loss, high efficiency
• High current capability
• Low forward voltage drop
• High surge capability
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Share Link: 