部品番号
150N3LLH6
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16 Pages
File Size
942.8 kB
メーカー
STMicroelectronics
150N3LLH6 データシート - STMicroelectronics
STMicroelectronics
Description
This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest R DS(on) in all packages.
FEATUREs
■ RDS(on) * Qg industry benchmark
■ Extremely low on-resistance RDS(on)
■ High avalanche ruggedness
■ Low gate drive power losses
APPLICATION
■ Switching applications
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