部品番号
11NM60N
コンポーネント説明
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page
20 Pages
File Size
607.4 kB
メーカー
STMicroelectronics
11NM60N データシート - STMicroelectronics
STMicroelectronics
Description
This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
FEATUREs
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
部品番号
コンポーネント説明
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