107N20N(2010) データシート - Infineon Technologies
メーカー

Infineon Technologies
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC for target application
• Halogen-free according to IEC61249-2-21
• Ideal for high-frequency switching and synchronous rectification
TO-3 POWER TRANSISTOR SOCKET
Unspecified
OptiMOS™3 Power-Transistor ( Rev : 2009 )
Infineon Technologies
OptiMOS™3 Power-Transistor ( Rev : 2013 )
Infineon Technologies
OptiMOS™3 Power-Transistor ( Rev : 2009 )
Infineon Technologies
OptiMOS™3 Power-Transistor
Infineon Technologies
OptiMOS™3 Power-Transistor
Infineon Technologies
OptiMOS™3 Power-Transistor
Infineon Technologies
OptiMOS™3 Power-Transistor
Infineon Technologies
OptiMOS™3 Power-Transistor
Infineon Technologies
OptiMOS™3 Power-Transistor
Infineon Technologies