DESCRIPTION
   The MOSFET uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

FEATURES
• High density cell design for ultra low RDS(ON)
• Fully characterized Avalanche voltage and current
• Good stability and uniformity with high EAS
• Excellent package for good heat dissipation
• Special process technology for high ESD capability

APPLICATIONS
• Power switching application
• Hard switched and high frequency circuits
• Uninterruptible Power Supply