PMBF4392 データシートの表示（PDF） - Philips Electronics
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PMBF4392 Datasheet PDF : 7 Pages
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Philips Semiconductors
N-channel FETs
Product specification
PMBF4391; PMBF4392;
PMBF4393
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Gate current (DC)
Total power dissipation up to Tamb = 40 °C (1)
Storage temperature range
Junction temperature
± VDS
VDGO
−VGSO
IG
Ptot
Tstg
Tj
max.
40 V
max.
40 V
max.
40 V
max.
50 mA
max. 250 mW
−65 to + 150 °C
max. 150 °C
THERMAL RESISTANCE
From junction to ambient(1)
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Gate-source voltage
IG = 1 mA; VDS = 0
Gate-source cut-off current
VDS = 0 V; −VGS = 20 V
VDS = 0 V; −VGS = 20 V; Tamb = 150 °C
Drain current
VDS = 20 V; VGS = 0
Gate-source breakdown voltage
−IG = 1 µA; VDS = 0
Gate-source cut-off voltage
ID = 1 nA; VDS = 20 V
Drain-source voltage (on)
ID = 12 mA; VGS = 0
ID = 6 mA; VGS = 0
ID = 3 mA; VGS = 0
Drain-source resistance (on)
ID = 0; VGS = 0; f = 1 kHz; Tamb = 25 °C
Drain cut-off current
−VGS = 12 V
−VGS = 7 V
−VGS = 5 V
−VGS = 12 V
−VGS = 7 V
−VGS = 5 V
VDS = 20 V
VDS = 20 V; Tamb = 150 °C
Rth j-a
=
430 K/W
VGSon
<
1V
−IGSS
−IGSS
PMBF4391
<
<
PMBF4392
0.1 nA
0.2 µA
PMBF4393
IDSS
>
50
<
150
25
5 mA
75 30 mA
−V(BR)GSS >
40
−V(P)GS
>
<
4
10
40 40 V
2 0.5 V
5
3V
VDSon
<
0.4
VDSon
<
VDSon
<
−
rds on
<
30
IDSX
<
0.1
IDSX
<
−
IDSX
<
−
IDSX
<
0.2
IDSX
<
−
IDSX
<
−
−
−V
0.4
−V
− 0.4 V
− 100 Ω
−
− nA
0.1
− nA
− 0.1 nA
−
− µA
0.2
− µA
− 0.2 µA
April 1995
3
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