PMBF4392 データシートの表示（PDF） - Philips Electronics
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PMBF4392 Datasheet PDF : 7 Pages
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Philips Semiconductors
N-channel FETs
DESCRIPTION
Symmetrical silicon n-channel
depletion type junction field-effect
transistors on a plastic
microminiature envelope intended for
application in thick and thin-film
circuits. The transistors are intended
for low-power chopper or switching
applications in industry.
PINNING
1 = drain
2 = source
3 = gate
Note
1. Drain and source are
interchangeable.
Marking code
PMBF4391 = p6J
PMBF4392 = p6K
PMBF4393 = p6G
QUICK REFERENCE DATA
Drain-source voltage
Drain current
VDS = 20 V; VGS = 0
Gate-source cut-off voltage
VDS = 20 V; ID = 1 nA
Drain-source resistance (on) at f = 1 kHz
ID = 0; VGS = 0
Feedback capacitance at f = 1 MHz
−VGS = 12 V; VDS = 0
Turn-off time
VDD = 10 V; VGS = 0
ID = 12 mA; −VGSM = 12 V
ID = 6 mA; −VGSM = 7 V
ID = 3 mA; −VGSM = 5 V
Product specification
PMBF4391;
PMBF4392; PMBF4393
handbook, halfpage
3
1
2
Top view
d
g
s
MAM385
Fig.1 Simplified outline and symbol, SOT23.
± VDS
PMBF4391
max.
40
PMBF4392
40
PMBF4393
40 V
IDSS
>
50
25
5 mA
>
−V(P)GS
<
4
2
0.5 V
10
5
3V
Rds on
<
30
60
100 Ω
Crs
<
3.5
3.5
3.5 pF
toff
<
toff
<
toff
<
20
−
−
35
−
−
−
ns
−
ns
50 ns
April 1995
2
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