BSN20W データシートの表示（PDF） - Philips Electronics
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BSN20W Datasheet PDF : 8 Pages
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Philips Semiconductors
N-channel enhancement mode
vertical D-MOS transistor
Product specification
BSN20W
handboo3k,0h0alfpage
Ptot
(mW)
200
MDA183
handbook, 3h0alfpage
C
(pF)
20
MRA781
100
0
0
50
100
150
200
Tamb (oC)
Device mounted on a printed-circuit board.
Fig.2 Power derating curve.
handbook, halfpage
500
ID
(mA)
400
300
200
100
0
0
4
MRA782
VGS = 10 V
7V
5V
4V
3V
2.5 V
8 VDS (V) 12
10
(1)
(2)
(3)
0
0
5
10
15
20
25
VDS (V)
VGS = 0; Tj = 25 °C; f = 1 MHz.
(1) Ciss.
(2) Coss.
(3) Crss.
Fig.3 Capacitance as a function of drain-source
voltage; typical values.
handbook, halfpage
500
ID
(mA)
400
MRA783
300
200
100
0
0
2
4
6
8
10
VGS (V)
Tj = 25 °C.
Fig.4 Output characteristics; typical values.
2000 Mar 10
VDS = 10 V; Tj = 25 °C.
Fig.5 Transfer characteristics; typical values.
4
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