STP45NE06 データシートの表示（PDF） - STMicroelectronics
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STP45NE06 Datasheet PDF : 6 Pages
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STP45NE06/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
Qg
Qgs
Qgd
Parameter
Turn-on Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 30 V
RG =4.7 Ω
VDD = 48 V
ID = 22.5 A
VGS = 10 V
ID = 45A VGS = 10 V
Min.
Typ.
30
100
60
18
17
Max.
40
135
80
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 48 V ID = 45 A
RG =4.7 Ω VGS = 10 V
Min.
Typ.
20
45
70
Max.
30
61
95
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 45 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 45 A
VDD = 30 V
IRRM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
di/dt = 100 A/µs
Tj = 150 oC
Min.
Typ.
Max.
45
180
Unit
A
A
1.5
V
70
ns
210
µC
6
A
3/6
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