STP85NF55L データシートの表示（PDF） - STMicroelectronics

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STP85NF55L

N-channel 55 V, 0.0060Ω, 80 A, TO-220, D2PAK STripFET™ II Power MOSFET

STMicroelectronics 

STB85NF55L, STP85NF55L

Electrical characteristics

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min Typ. Max Unit

ISD Source-drain current

-

ISDM(1) Source-drain current (pulsed)

-

VSD(2) Forward on voltage

ISD = 80 A, VGS = 0

-

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 80 A,

di/dt = 100 A/µs,

-

VDD = 20 V, TJ = 150 °C

Figure 16 on page 8

80 A

320 A

1.5 V

80

ns

240

nC

6

A

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

Doc ID 8544 Rev 8

5/14

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