STGB3NB60SDT4 データシートの表示（PDF） - STMicroelectronics
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STGB3NB60SDT4 Datasheet PDF : 8 Pages
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STGB3NB60SD
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Rthc-sink Thermal Resistance Case-sink
Max
2.14
Max
62.5
Typ
0.5
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min. Typ.
VBR(CES) Collector-Emitter
Breakdown Voltage
ID = 250 µA
VGE = 0
600
ICES
Collector cut-off (VGE = 0)
VCE = Max Rating Tj = 25 °C
VCE = Max Rating Tj = 125 °C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
VCE = 0
ON (*)
Symbol
VGE(th)
VCE(SAT)
Parameter
Gate Threshold Voltage
Collector-Emitter Saturation
Voltage
Test Conditions
VCE = VGE
IC = 250 µA
VGE = 15 V
IC = 1.5 A
VGE = 15 V
IC = 3 A
VGE = 15 V ID = 3 A Tj = 125 °C
Min.
2.5
Typ.
1
1.2
1.1
°C/W
°C/W
°C/W
Max.
10
100
±100
Unit
V
µA
µA
nA
Max.
5
1.5
Unit
V
V
V
V
DYNAMIC
Symbol
gfs
Cies
Coes
Cres
QG
QGE
QGC
ICL
Parameter
Test Conditions
Forward Transconductance
Input Capacitance
Output Capacitance
VCE = 25 V
IC = 3 A
VCE = 25V f = 1 MHz VGE = 0
Reverse Transfer Capacitanc-
es
Total Gate Charge
Gate-Emitter Charge
VCE=480V IC=3 A VGE=15 V
Gate-Collector Charge
Latching Current
Vclamp = 480 V
Tj=150 °C
RG = 1 KΩ
Min.
1.7
12
Typ.
2.5
255
30
5.6
18
5.4
5.5
Max.
330
40
7
Unit
S
pF
pF
pF
nC
nC
nC
A
SWITCHING ON
Symbol
Parameter
td(on)
tr
DelayTime
Rise Time
(di/dt)on
Eon
Turn-on Current Slope
Turn-on Switching Losses
Test Conditions
VCC = 480 V
VGE = 15 V
IC = 3 A
RG = 1 kΩ
VCC = 480 V
VGE = 15 V
Tj=125 °C
IC = 3 A
RG = 1 kΩ
Min.
Typ.
125
150
50
1100
Max.
Unit
ns
ns
A/µs
µJ
2/8
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