FDN335 データシートの表示（PDF） - Fairchild Semiconductor
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FDN335 Datasheet PDF : 8 Pages
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Typical Characteristics (continued)
5
ID = 1.7A
4
3
VDS = 5V
10V
15V
2
1
0
0
0.5
1
1.5
2
2.5
3
3.5
4
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
10
RDS(ON) LIMIT
1ms
1
0.1
VGS = 4.5V
SINGLE PULSE
RθJA = 270oC/W
TA = 25oC
10ms
100ms
1s
10s
DC
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
500
400
300
CISS
f = 1MHz
VGS = 0 V
200
100
0
0
COSS
CRSS
4
8
12
16
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
20
SINGLE PULSE
16
RθJA=270oC/W
TA=25oC
12
8
4
0
0.0001 0.001
0.01
0.1
1
10
SINGLE PULSE TIME (SEC)
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.002
0.001
0.0001
0.001
0.01
0.1
1
t1 , TIME (sec)
R θJA (t) = r(t) * RθJA
RθJA = 270 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA (t)
Duty Cycle, D = t1 /t2
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
FDN335N Rev. C
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