NE662M16-T3 データシートの表示（PDF） - NEC => Renesas Technology
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NE662M16-T3 Datasheet PDF : 9 Pages
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TYPICAL PERFORMANCE CURVES (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
300
Mounted on Glass Epoxy Board
(1.08 cm2 × 1.0 mm (t) )
250
200
150
115
100
50
0
25 50 75 100 125 150
Ambient Temperature, TA (°C)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
35
VCE = 2 V
30
25
20
15
10
5
0
0.2 0.4 0.6 0.8 1.0
Base to Emitter Voltage, VBE (V)
1 000
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 2 V
100
10
0.1
1
10
100
Collector Current, lC (mA)
NE662M16
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0.20
f = 1 MHz
0.16
0.12
0.08
0.04
0
2
4
6
8
10
Collector to Base Voltage, VCB (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
40
500 µA
35
450 µA
30
400 µA
25
350 µA
300 µA
20
250 µA
15
200 µA
10
150 µA
5
100 µA
IB = 50 µA
0
1
2
3
4
Collector to Emitter Voltage, VCE (V)
GAIN BANDWIDTH vs.
COLLECTOR CURRENT
30
VCE = 2 V
f = 2 GHz
25
20
15
10
5
0
1
10
100
Collector Current, IC (mA)
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