2SC4550 データシートの表示（PDF） - New Jersey Semiconductor

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2SC4550

Silicon NPN Power Transistor

New Jersey Semiconductor 

Silicon NPN Power Transistor

2SC4550

ELECTRICAL CHARACTERISTICS

Tj=25'C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VcEO(SUS) Collector-Emitter Sustaining Voltage |C=4.0A; IB=0.4A, L= 1mH

60

VcEX(SUS)

Collector-Emitter Sustaining Voltage

lc= 4.0A ; IB1= -|KZ= 0.4A,

VBE(OFF)=-1.5V, L=180w H.clamped

60

VcE(sat)-i Collector-Emitter Saturation Voltage lc= 4A; IB= 0.2A

VcE(sat)-2 Collector-Emitter Saturation Voltage lc= 6A; IB= 0.3A

VeE(sat)-i Base-Emitter Saturation Voltage

lc= 4A; IB= 0.2A

VBE(sal)-2 Base-Emitter Saturation Voltage

lc= 6A; IB= 0.3A

ICBO

Collector Cutoff Current

VCB= 60V ; IE= 0

V

V

0.3

V

0.5

V

1.2

V

1.5

V

10

nA

ICER

Collector Cutoff Current

ICEX

Collector Cutoff Current

IEBO

Emitter Cutoff Current

VCE=60V; RBE= 500,Ta=125°C

VCE= 60V; VBE(OB)= -1.5V

VCE= 60V; VBE(OK)= -1.5V,Ta=125'C

VEB= 5V; |c= 0 •

1.0 mA

10

uA

1.0 mA

10

uA

hpe-1

DC Current Gain

lc= 0.7A ; VCE= 2V

100

hpE-2

DC Current Gain

lc=1.5A; VCE=2V

100

400

hpE-3

DC Current Gain

|c= 4.0A ; VCE= 2V

60

COB

Output Capacitance

I E = 0 ; VCB= 10V; f= 1.0MHz

100

PF

fr

Current-Gain—Bandwidth Product lc=1A;VCE=10V

150

MHz

Switching times

ton

Turn-on Time

tstg

Storage Time

tf

Fall Time

lc=4.0A,RL=12.5Q,

lBi=-lB2=0.2A,VCcR= 50V

0.3 v s

1.5 u s

0.3 u s

hpE-2 Classifications

M

L

K

100-200 150-300 200-400

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