PJM2324NSA データシートの表示（PDF） - Unspecified
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PJM2324NSA Datasheet PDF : 6 Pages
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PJM2324NSA
N- Enhancement Mode Field Effect Transistor
Electrical Characteristics (TA=25℃ unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Static Characteristics
Drain-Source Breakdown Voltage V(BR)DSS
VGS = 0V, ID = 250μA
100
Gate Leakage Current
IGSS
VDS = 0V, VGS = ±20V
-
Zero Gate Voltage Drain Current
IDSS
VDS =100V, VGS = 0V
-
Gate Threshold Voltage Note3
VGS(th)
VDS = VGS, ID = 250μA
1.2
VGS = 10V, ID =1.5A
-
Drain-Source On-Resistance Note3 RDS(ON)
VGS =4.5V, ID = 0.5A
-
Forward transconductance Note3
gfs
VDS = 20V, ID = 1.5A
-
Dynamic Characteristics
Input Capacitance
Ciss
-
Output Capacitance
Coss VDS = 50V, VGS = 0V, f = 1MHz
-
Reverse Transfer Capacitance
Crss
-
Switching Characteristics
Turn-On Delay Time
td(on)
-
Turn-On Rise Time
Turn-Off Delay Time
tr
VDD=50V, VGEN=4.5V,
-
td(off)
RL=39Ω, RG=1Ω, ID=1.3A
-
Turn-Off Fall Time
tf
-
Total Gate Charge
Qg
-
Gate-Source Charge
Gate-Drain Charge
Qgs VDS=50V,VGS =4.5V,ID=1.6A
-
Qgd
-
Source-Drain Diode Characteristics
Forward Diode Voltage Note2
VSD
VGS = 0V, IS = 1.3A
-
Notes:1. Repetitive rating: Pluse width limited by junction temperature.
2. Surface mounted on FR4 board，t ≦ 10 sec.
3. Pulse test: pulse width ≦ 300us, duty cycle≦ 0.5%.
Typ
-
-
-
-
-
-
2
190
22
13
-
-
-
-
-
0.75
1.4
-
Max Unit
-
V
±100
nA
1
μA
2.8
V
234
mΩ
278
-
S
-
-
pF
-
45
39
ns
26
20
5.8
-
nC
-
1.2
V
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Revision：1.0 Sep-2018
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