TJ15P04M3 データシートの表示（PDF） - Inchange Semiconductor

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TJ15P04M3

P-Channel MOSFET Transistor

Inchange Semiconductor 

Isc P-Channel MOSFET Transistor

TJ15P04M3

·FEATURES

·Low drain-source on-resistance:

RDS(ON) = 36mΩ (MAX)

·Enhancement mode:

Vth =0.8 to 2V (VDS = -10 V, ID=-7.5A)

·100% avalanche tested

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

·DESCRITION

·Switching Voltage Regulators

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage

-40

V

VGS

Gate-Source Voltage

±20

V

ID

Drain Current-Continuous

-15

A

IDM

Drain Current-Single Pulsed

-45

A

PD

Total Dissipation @TC=25℃

29

W

Tj

Max. Operating Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150 ℃

·THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth(ch-c) Channel-to-case thermal resistance

MAX

4.3

UNIT

℃/W

isc website：www.iscsemi.cn

1 isc & iscsemi is registered trademark

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