SI4482DY-T1-E3 データシートの表示（PDF） - VBsemi Electronics Co.,Ltd
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SI4482DY-T1-E3 Datasheet PDF : 9 Pages
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SI4482DY-T1-E3
www.VBsemi.tw
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
VDS
ΔVDS /TJ
ΔVGS(th) /TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
ID = 250 µA
VDS = VGS , ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 100 V, VGS = 0 V
VDS = 100 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 10 V, VGS = 10 V
VGS = 10 V, ID = 5 A
VGS = 8 V, ID = 5 A
VDS = 15 V, ID = 5 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Ciss
Coss
Crss
Qg
VDS = 50 V, VGS = 0 V, f = 1 MHz
VDS = 75 V, VGS = 10 V, ID = 5 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
a. Guaranteed by design, not subject to production testing.
VDS = 75 V, VGS = 8 V, ID = 5 A
f = 1 MHz
VDD = 50 V, RL = 10 Ω
ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω
VDD = 50 V, RL = 10 Ω
ID ≅ 5 A, VGEN = 8 V, Rg = 1 Ω
TC = 25 °C
IS = 2.6 A
IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
Typ.
Max.
Unit
100
V
172
- 10
mV/°C
1.0
3.0
V
± 100
nA
1
10
µA
30
A
0.036 0.040
Ω
0.037 0.047
23
S
1735
160
pF
37
28.5
43
23
35
nC
8
6.5
0.85
1.3
Ω
14
21
12
18
22
33
6
10
ns
16
24
12
18
20
30
7
12
7.7
A
50
0.77
1.2
V
63
95
ns
110
165
nC
49
ns
14
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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