P0550BD データシートの表示（PDF） - Unspecified
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P0550BD Datasheet PDF : 5 Pages
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P0550BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
500V
1.75Ω @VGS = 10V
ID
4.5A
TO-252
100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS
500
Gate-Source Voltage
VGS
±30
Continuous Drain Current2
Pulsed Drain Current1 , 2
Avalanche Energy3
TC = 25 °C
TC = 100 °C
ID
4.5
3
IDM
15
EAS
31
Power Dissipation
TC = 25 °C
PD
52
TC = 100 °C
20
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3VDD = 50V, L = 10mH, starting TJ = 25°C.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2.4
62.5
UNITS
°C / W
Ver 1.1
1
2013-3-14
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