STW32N65M5 データシートの表示（PDF） - STMicroelectronics

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STW32N65M5

N-channel 650 V, 95 mΩ typ., 24 A MDmesh™ M5 Power MOSFETs in TO-220FP, I²PAK, TO-220 and TO-247 packages

STMicroelectronics 

STF32N65M5,STI32N65M5,STP32N65M5,STW32N65M5

Electrical ratings

1

Electrical ratings

Table 1. Absolute maximum ratings

Value

Symbol

Parameter

I2PAK,

Unit

TO-220, TO-220FP

) VGS

Gate-source voltage

t(s ID

Drain current (continuous) at TC = 25 °C

c ID

Drain current (continuous) at TC = 100 °C

du IDM (1)

Drain current (pulsed)

ro PTOT

Total power dissipation at TC = 25 °C

P dv/dt (2) Peak diode recovery voltage slope

lete VISO

Insulation withstand voltage (RMS) from all three leads to external

heat-sink (t = 1 s, TC = 25 °C)

so Tj

Operating junction temperature range

b Tstg

Storage temperature range

- O 1. Pulse width limited by safe operating area.

) 2. ISD ≤ 24 A, di/dt ≤ 400 A/μs, VDS(peak) ≤ V(BR)DSS.

TO-247

±25

24

15

96

150

35

15

2500

-55 to 150

roduct(s Symbol

te P Rthj-case

leRthj-amb

Table 2. Thermal data

Parameter

Thermal resistance junction-case

Thermal resistance junction-ambient

Value

I2PAK

TO-220

TO-247

0.83

62.5

50

TO-220FP

3.6

62.5

Obso Table 3. Avalanche characteristics

V

A

A

A

W

V/ns

V

°C

Unit

°C/W

°C/W

Symbol

IAR

EAS

Parameter

Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max)

Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)

Value

Unit

8

A

650

mJ

DS12808 - Rev 1

page 2/21

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