BC847S データシートの表示（PDF） - Fairchild Semiconductor

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BC847S

NPN Multi-Chip General Purpose Amplifier

Fairchild Semiconductor 

BC847S

E2

B2

C1

SC70-6

Mark: 1C

C2

B1

pin #1 E1

NOTE: The pinouts are symmetrical; pin 1 and pin

4 are interchangeable. Units inside the carrier can

be of either orientation and will not affect the

functionality of the device.

NPN Multi-Chip General Purpose Amplifier

This device is designed for general purpose amplifier applications at collector

currents to 200 mA. Sourced from Process 07.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

VCEO

VCES

VCBO

VEBO

IC

TJ, Tstg

Collector-Emitter Voltage

Collector-Base Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

Operating and Storage Junction Temperature Range

45

V

50

V

4

50

V

6.0

V

200

mA

-55 to +150

°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol

Characteristic

PD

Total Device Dissipation

Derate above 25°C

RθJA

Thermal Resistance, Junction to Ambient

Max

BC847S

300

2.4

415

Units

mW

mW/°C

°C/W

2001 Fairchild Semiconductor Corporation

Rev.A1

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