4124DG-T60-K データシートの表示（PDF） - Unisonic Technologies
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4124DG-T60-K Datasheet PDF : 3 Pages
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4124D
TYPICAL CHARACTERISTICS
NPN EPITAXIAL SILICON TRANSISTOR
Collector Current vs.
Collector-Base Voltage
1.2
1.0
0.8
0.6
0.4
0.2
0
0 100 200 300 400 500
Collector-Base Voltage, VCBO (V)
Collector Current vs.
Collector-Emitter Voltage
12
10
8
6
4
2
0
0
100
200
300
400
Collector-Emitter Voltage, VCEO (V)
Collector Current vs.
Collector-Emitter Voltage
2.4
IB=263.85mA
2
1.6
1.2
IB=136.24mA
0.8
0.4
IB=7.19mA
00 1
2
34
5
6
Collector-Emitter Voltage, VCE (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R204-031.B
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