3SK309 データシートの表示（PDF） - Hitachi -> Renesas Electronics
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3SK309 Datasheet PDF : 11 Pages
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3SK309
Forward Transfer Admittance vs.
Gate1 to Source Voltage
100
VDS = 3 V
f = 1 kHz
80
0V
60
–0.2 V
–0.4 V
40
–0.6 V
20
–0.8 V
VG2S = –1 V
0
–2.0 –1.6 –1.2 –0.8 –0.4 0
Gate1 to Source Voltage VG1S (V)
Power Gain vs. Drain Current
25
3V
20
VDS = 1.5 V
15
10
5
VG2S = 0
f = 900 MHz
0
4
8
12 16 20
Drain Current I D (mA)
Forward Transfer Admittance vs.
Drain Current
100
VDS = 3 V
VG2S = 0
80 f = 1 kHz
60
40
20
0
4
8
12 16 20
Drain Current ID (mA)
Noise Figure vs. Drain Current
2.0
1.6
VDS = 1.5 V
1.2
3V
0.8
0.4
VG2S = 0
f = 900 MHz
0
4
8
12 16 20
Drain Current I D (mA)
4
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