3SK309 データシートの表示（PDF） - Hitachi -> Renesas Electronics

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3SK309

GaAs N Channel Dual Gate MES FET UHF RF Amplifier

Hitachi -> Renesas Electronics 

3SK309

GaAs N Channel Dual Gate MES FET

UHF RF Amplifier

Features

• Capable of low voltage operation (VDS = 1.5 to 3 V)

• Excellent low noise characteristics (NF = 1.25 dB typ. at f = 900 MHz)

• High power gain (PG = 21.0 dB typ. at f = 900 MHz)

Outline

CMPAK–4

2

3

1

4

1. Source

2. Gate1

3. Gate2

4. Drain

ADE-208-472 A

2nd. Edition

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