DTD123YL-AE3-6-R データシートの表示（PDF） - Unisonic Technologies
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DTD123YL-AE3-6-R Datasheet PDF : 3 Pages
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DTD123Y
NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Fig.1 Input Voltage vs. Output Current
(ON Characteristics)
100
VOUT=0.3V
50
20
10
5
2
1
500m
Ta=-40℃
25℃
100℃
200m
100m
500µ1m 2m 5m 10m 20m 50m100m200m 500m
Output current, IO (A)
Fig.2 Output Current vs. Input Voltage
(OFF Characteristics)
10m
5m
VCC=5V
2m
1m
500µ
200µ
100µ
50µ
Ta=100℃
25℃
-40℃
20µ
10µ
5µ
2µ
1µ
0 0.5 1.0 1.5 2.0 2.5 3.0
Input Voltage, VI(OFF) (V)
Fig.3 DC Current Gain vs. Output Current
1K
500
Ta=100℃
200
25℃
-40℃
100
50
VOUT=5V
20
10
5
2
1
500µ
2m 5m10m20m50m100m200m500m
Output Current, IOUT (A)
Fig.4 Output Voltage vs. Output Current
1
500m
200m
100m
50m
Ta=100℃
25℃
-40℃
IO/II=20
20m
10m
5m
2m
1m
500µ1m 2m 5m10m 20m50m100m200m500m
Output Current, IOUT (A)
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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
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presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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