DTD123YG-AE3-R データシートの表示（PDF） - Unisonic Technologies

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DTD123YG-AE3-R

DIGITAL TRANSISTORS (BUILT-IN RESISTORS)

Unisonic Technologies 

DTD123Y

NPN SILICON TRANSISTOR

 ABSOLUTE MAXIMUM RATING (TA=25°C, unless others specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Supply voltage

VCC

50

V

Input voltage

Output current

VIN

-5 ~ +12

V

IC

500

mA

Power dissipation

SOT-23/SOT-323

TO-92

PD

200

mW

625

mW

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 ELECTRICAL CHARACTERISTICS (TA=25°C, unless others specified)

PARAMETER

SYMBOL

Input Voltage

VIN(OFF)

VIN(ON)

Output Voltage

Input Current

VOUT(ON)

IIN

Output Current

DC Current Gain

IO(OFF)

hFE

Input Resistance

Resistance Ratio

R1

R2/R1

Transition Frequency

fT

Note: Transition frequency of the device.

TEST CONDITIONS

VCC=5V, IOUT=100μA

VOUT=0.3V, IOUT=20mA

IO/II=50mA/2.5mA

VIN=5V

VCC=50V, VIN=0V

VOUT=5V, IOUT=50mA

VCE=10V, IE= −50mA, f=100MHz (Note)

MIN

2

56

1.54

3.6

TYP

0.1

2.2

4.5

200

MAX UNIT

0.3

V

0.3

V

3.6 mA

0.5 μA

2.86 KΩ

5.5

MHz

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 3

QW-R206-087.D

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